Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates

Catalyst-free, vertical array of InAs nanowires (NWs) are grown on Si (111) substrate using MOCVD technique. The as-grown InAs NWs show a zinc-blende crystal structure along a < 111 > direction. It is found that both the density and length of InAs NWs decrease with increasing growth temperatur...

Descripción completa

Detalles Bibliográficos
Autores principales: Li, Tianfeng, Chen, Yonghai, Lei, Wen, Zhou, Xiaolong, Luo, Shuai, Hu, Yongzheng, Wang, Lijun, Yang, Tao, Wang, Zhanguo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211884/
https://www.ncbi.nlm.nih.gov/pubmed/21777417
http://dx.doi.org/10.1186/1556-276X-6-463

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211884/
https://www.ncbi.nlm.nih.gov/pubmed/21777417
http://dx.doi.org/10.1186/1556-276X-6-463

Ejemplares similares