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Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates

Catalyst-free, vertical array of InAs nanowires (NWs) are grown on Si (111) substrate using MOCVD technique. The as-grown InAs NWs show a zinc-blende crystal structure along a < 111 > direction. It is found that both the density and length of InAs NWs decrease with increasing growth temperatur...

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Detalles Bibliográficos
Autores principales:	Li, Tianfeng, Chen, Yonghai, Lei, Wen, Zhou, Xiaolong, Luo, Shuai, Hu, Yongzheng, Wang, Lijun, Yang, Tao, Wang, Zhanguo
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer 2011
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211884/ https://www.ncbi.nlm.nih.gov/pubmed/21777417 http://dx.doi.org/10.1186/1556-276X-6-463

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