Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient

La-doped zirconia films, deposited by ALD at 300°C, were found to be amorphous with dielectric constants (k-values) up to 19. A tetragonal or cubic phase was induced by post-deposition annealing (PDA) at 900°C in both nitrogen and air. Higher k-values (~32) were measured following PDA in air, but no...

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Detalles Bibliográficos
Autores principales: Zhao, C Z, Werner, M, Taylor, S, Chalker, P R, Jones, A C, Zhao, Chun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211993/
https://www.ncbi.nlm.nih.gov/pubmed/27502670
http://dx.doi.org/10.1007/s11671-010-9782-z
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author Zhao, C Z
Werner, M
Taylor, S
Chalker, P R
Jones, A C
Zhao, Chun
author_facet Zhao, C Z
Werner, M
Taylor, S
Chalker, P R
Jones, A C
Zhao, Chun
author_sort Zhao, C Z
collection PubMed
description La-doped zirconia films, deposited by ALD at 300°C, were found to be amorphous with dielectric constants (k-values) up to 19. A tetragonal or cubic phase was induced by post-deposition annealing (PDA) at 900°C in both nitrogen and air. Higher k-values (~32) were measured following PDA in air, but not after PDA in nitrogen. However, a significant dielectric relaxation was observed in the air-annealed film, and this is attributed to the formation of nano-crystallites. The relaxation behavior was modeled using the Curie–von Schweidler (CS) and Havriliak–Negami (HN) relationships. The k-value of the as-deposited films clearly shows a mixed CS and HN dependence on frequency. The CS dependence vanished after annealing in air, while the HN dependence disappeared after annealing in nitrogen.
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spelling pubmed-32119932011-11-09 Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient Zhao, C Z Werner, M Taylor, S Chalker, P R Jones, A C Zhao, Chun Nanoscale Res Lett Nano Express La-doped zirconia films, deposited by ALD at 300°C, were found to be amorphous with dielectric constants (k-values) up to 19. A tetragonal or cubic phase was induced by post-deposition annealing (PDA) at 900°C in both nitrogen and air. Higher k-values (~32) were measured following PDA in air, but not after PDA in nitrogen. However, a significant dielectric relaxation was observed in the air-annealed film, and this is attributed to the formation of nano-crystallites. The relaxation behavior was modeled using the Curie–von Schweidler (CS) and Havriliak–Negami (HN) relationships. The k-value of the as-deposited films clearly shows a mixed CS and HN dependence on frequency. The CS dependence vanished after annealing in air, while the HN dependence disappeared after annealing in nitrogen. Springer 2010-09-30 /pmc/articles/PMC3211993/ /pubmed/27502670 http://dx.doi.org/10.1007/s11671-010-9782-z Text en Copyright ©2010 Zhao et al. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Zhao, C Z
Werner, M
Taylor, S
Chalker, P R
Jones, A C
Zhao, Chun
Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient
title Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient
title_full Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient
title_fullStr Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient
title_full_unstemmed Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient
title_short Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient
title_sort dielectric relaxation of la-doped zirconia caused by annealing ambient
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211993/
https://www.ncbi.nlm.nih.gov/pubmed/27502670
http://dx.doi.org/10.1007/s11671-010-9782-z
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AT chalkerpr dielectricrelaxationofladopedzirconiacausedbyannealingambient
AT jonesac dielectricrelaxationofladopedzirconiacausedbyannealingambient
AT zhaochun dielectricrelaxationofladopedzirconiacausedbyannealingambient

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