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Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles
Depositions on surfaces of semiconductor wafers of InP and GaN were performed from isooctane colloid solutions of palladium (Pd) nanoparticles (NPs) in AOT reverse micelles. Pd NPs in evaporated colloid and in layers deposited electrophoretically were monitored by SEM. Diodes were prepared by making...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Springer
2011
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212005/ https://www.ncbi.nlm.nih.gov/pubmed/21831273 http://dx.doi.org/10.1186/1556-276X-6-490 |