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Optical properties of as-grown and annealed InAs quantum dots on InGaAs cross-hatch patterns

InAs quantum dots (QDs) grown on InGaAs cross-hatch pattern (CHP) by molecular beam epitaxy are characterized by photoluminescence (PL) at 20 K. In contrast to QDs grown on flat GaAs substrates, those grown on CHPs exhibit rich optical features which comprise as many as five ground-state emissions f...

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Detalles Bibliográficos
Autores principales:	Himwas, Chalermchai, Panyakeow, Somsak, Kanjanachuchai, Songphol
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer 2011
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212011/ https://www.ncbi.nlm.nih.gov/pubmed/21849063 http://dx.doi.org/10.1186/1556-276X-6-496

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