Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy

Diamond is not only a free standing highly transparent window but also a promising carrier confinement layer for InN based devices, yet little is known of the band offsets in InN/diamond system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band offset...

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Detalles Bibliográficos
Autores principales: Shi, K, Li, DB, Song, HP, Guo, Y, Wang, J, Xu, XQ, Liu, JM, Yang, AL, Wei, HY, Zhang, B, Yang, SY, Liu, XL, Zhu, QS, Wang, ZG
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212014/
https://www.ncbi.nlm.nih.gov/pubmed/27502672
http://dx.doi.org/10.1007/s11671-010-9796-6
Descripción
Sumario:Diamond is not only a free standing highly transparent window but also a promising carrier confinement layer for InN based devices, yet little is known of the band offsets in InN/diamond system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band offset (VBO) of InN/diamond heterostructure. The value of VBO was determined to be 0.39 ± 0.08 eV and a type-I heterojunction with a conduction band offset (CBO) of 4.42 ± 0.08 eV was obtained. The accurate determination of VBO and CBO is important for the application of III-N alloys based electronic devices.

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