Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy

Diamond is not only a free standing highly transparent window but also a promising carrier confinement layer for InN based devices, yet little is known of the band offsets in InN/diamond system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band offset...

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Detalles Bibliográficos
Autores principales: Shi, K, Li, DB, Song, HP, Guo, Y, Wang, J, Xu, XQ, Liu, JM, Yang, AL, Wei, HY, Zhang, B, Yang, SY, Liu, XL, Zhu, QS, Wang, ZG
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212014/
https://www.ncbi.nlm.nih.gov/pubmed/27502672
http://dx.doi.org/10.1007/s11671-010-9796-6
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author Shi, K
Li, DB
Song, HP
Guo, Y
Wang, J
Xu, XQ
Liu, JM
Yang, AL
Wei, HY
Zhang, B
Yang, SY
Liu, XL
Zhu, QS
Wang, ZG
author_facet Shi, K
Li, DB
Song, HP
Guo, Y
Wang, J
Xu, XQ
Liu, JM
Yang, AL
Wei, HY
Zhang, B
Yang, SY
Liu, XL
Zhu, QS
Wang, ZG
author_sort Shi, K
collection PubMed
description Diamond is not only a free standing highly transparent window but also a promising carrier confinement layer for InN based devices, yet little is known of the band offsets in InN/diamond system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band offset (VBO) of InN/diamond heterostructure. The value of VBO was determined to be 0.39 ± 0.08 eV and a type-I heterojunction with a conduction band offset (CBO) of 4.42 ± 0.08 eV was obtained. The accurate determination of VBO and CBO is important for the application of III-N alloys based electronic devices.
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spelling pubmed-32120142011-11-09 Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy Shi, K Li, DB Song, HP Guo, Y Wang, J Xu, XQ Liu, JM Yang, AL Wei, HY Zhang, B Yang, SY Liu, XL Zhu, QS Wang, ZG Nanoscale Res Lett Nano Express Diamond is not only a free standing highly transparent window but also a promising carrier confinement layer for InN based devices, yet little is known of the band offsets in InN/diamond system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band offset (VBO) of InN/diamond heterostructure. The value of VBO was determined to be 0.39 ± 0.08 eV and a type-I heterojunction with a conduction band offset (CBO) of 4.42 ± 0.08 eV was obtained. The accurate determination of VBO and CBO is important for the application of III-N alloys based electronic devices. Springer 2010-09-30 /pmc/articles/PMC3212014/ /pubmed/27502672 http://dx.doi.org/10.1007/s11671-010-9796-6 Text en Copyright ©2010 Shi et al. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Shi, K
Li, DB
Song, HP
Guo, Y
Wang, J
Xu, XQ
Liu, JM
Yang, AL
Wei, HY
Zhang, B
Yang, SY
Liu, XL
Zhu, QS
Wang, ZG
Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy
title Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy
title_full Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy
title_fullStr Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy
title_full_unstemmed Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy
title_short Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy
title_sort determination of inn/diamond heterojunction band offset by x-ray photoelectron spectroscopy
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212014/
https://www.ncbi.nlm.nih.gov/pubmed/27502672
http://dx.doi.org/10.1007/s11671-010-9796-6
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