High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires

We investigated the polarization dependence of the near-band-edge photoluminescence in ZnO strain-free nanowires grown by vapor phase technique. The emission is polarized perpendicular to the nanowire axis with a large polarization ratio (as high as 0.84 at 4.2 K and 0.63 at 300 K). The observed pol...

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Detalles Bibliográficos
Autores principales: Jacopin, Gwenole, Rigutti, Lorenzo, Bugallo, Andres De Luna, Julien, François Henry, Baratto, Camilla, Comini, Elisabetta, Ferroni, Matteo, Tchernycheva, Maria
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212016/
https://www.ncbi.nlm.nih.gov/pubmed/21854578
http://dx.doi.org/10.1186/1556-276X-6-501
Descripción
Sumario:We investigated the polarization dependence of the near-band-edge photoluminescence in ZnO strain-free nanowires grown by vapor phase technique. The emission is polarized perpendicular to the nanowire axis with a large polarization ratio (as high as 0.84 at 4.2 K and 0.63 at 300 K). The observed polarization ratio is explained in terms of selection rules for excitonic transitions derived from the k·p theory for ZnO. The temperature dependence of the polarization ratio evidences a gradual activation of the X(C )excitonic transition. PACS: 78.55.Cr, 77.22.Ej, 81.07.Gf.

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