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High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires

We investigated the polarization dependence of the near-band-edge photoluminescence in ZnO strain-free nanowires grown by vapor phase technique. The emission is polarized perpendicular to the nanowire axis with a large polarization ratio (as high as 0.84 at 4.2 K and 0.63 at 300 K). The observed pol...

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Autores principales: Jacopin, Gwenole, Rigutti, Lorenzo, Bugallo, Andres De Luna, Julien, François Henry, Baratto, Camilla, Comini, Elisabetta, Ferroni, Matteo, Tchernycheva, Maria
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212016/
https://www.ncbi.nlm.nih.gov/pubmed/21854578
http://dx.doi.org/10.1186/1556-276X-6-501
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author Jacopin, Gwenole
Rigutti, Lorenzo
Bugallo, Andres De Luna
Julien, François Henry
Baratto, Camilla
Comini, Elisabetta
Ferroni, Matteo
Tchernycheva, Maria
author_facet Jacopin, Gwenole
Rigutti, Lorenzo
Bugallo, Andres De Luna
Julien, François Henry
Baratto, Camilla
Comini, Elisabetta
Ferroni, Matteo
Tchernycheva, Maria
author_sort Jacopin, Gwenole
collection PubMed
description We investigated the polarization dependence of the near-band-edge photoluminescence in ZnO strain-free nanowires grown by vapor phase technique. The emission is polarized perpendicular to the nanowire axis with a large polarization ratio (as high as 0.84 at 4.2 K and 0.63 at 300 K). The observed polarization ratio is explained in terms of selection rules for excitonic transitions derived from the k·p theory for ZnO. The temperature dependence of the polarization ratio evidences a gradual activation of the X(C )excitonic transition. PACS: 78.55.Cr, 77.22.Ej, 81.07.Gf.
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spelling pubmed-32120162011-11-09 High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires Jacopin, Gwenole Rigutti, Lorenzo Bugallo, Andres De Luna Julien, François Henry Baratto, Camilla Comini, Elisabetta Ferroni, Matteo Tchernycheva, Maria Nanoscale Res Lett Nano Express We investigated the polarization dependence of the near-band-edge photoluminescence in ZnO strain-free nanowires grown by vapor phase technique. The emission is polarized perpendicular to the nanowire axis with a large polarization ratio (as high as 0.84 at 4.2 K and 0.63 at 300 K). The observed polarization ratio is explained in terms of selection rules for excitonic transitions derived from the k·p theory for ZnO. The temperature dependence of the polarization ratio evidences a gradual activation of the X(C )excitonic transition. PACS: 78.55.Cr, 77.22.Ej, 81.07.Gf. Springer 2011-08-19 /pmc/articles/PMC3212016/ /pubmed/21854578 http://dx.doi.org/10.1186/1556-276X-6-501 Text en Copyright ©2011 Jacopin et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Jacopin, Gwenole
Rigutti, Lorenzo
Bugallo, Andres De Luna
Julien, François Henry
Baratto, Camilla
Comini, Elisabetta
Ferroni, Matteo
Tchernycheva, Maria
High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires
title High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires
title_full High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires
title_fullStr High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires
title_full_unstemmed High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires
title_short High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires
title_sort high degree of polarization of the near-band-edge photoluminescence in zno nanowires
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212016/
https://www.ncbi.nlm.nih.gov/pubmed/21854578
http://dx.doi.org/10.1186/1556-276X-6-501
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