Influence of the oxide layer for growth of self-assisted InAs nanowires on Si(111)

The growth of self-assisted InAs nanowires (NWs) by molecular beam epitaxy (MBE) on Si(111) is studied for different growth parameters and substrate preparations. The thickness of the oxide layer present on the Si(111) surface is observed to play a dominant role. Systematic use of different pre-trea...

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Autores principales: Madsen, Morten Hannibal, Aagesen, Martin, Krogstrup, Peter, Sørensen, Claus, Nygård, Jesper
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212055/
https://www.ncbi.nlm.nih.gov/pubmed/21880130
http://dx.doi.org/10.1186/1556-276X-6-516
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author Madsen, Morten Hannibal
Aagesen, Martin
Krogstrup, Peter
Sørensen, Claus
Nygård, Jesper
author_facet Madsen, Morten Hannibal
Aagesen, Martin
Krogstrup, Peter
Sørensen, Claus
Nygård, Jesper
author_sort Madsen, Morten Hannibal
collection PubMed
description The growth of self-assisted InAs nanowires (NWs) by molecular beam epitaxy (MBE) on Si(111) is studied for different growth parameters and substrate preparations. The thickness of the oxide layer present on the Si(111) surface is observed to play a dominant role. Systematic use of different pre-treatment methods provides information on the influence of the oxide on the NW morphology and growth rates, which can be used for optimizing the growth conditions. We show that it is possible to obtain 100% growth of vertical NWs and no parasitic bulk structures between the NWs by optimizing the oxide thickness. For a growth temperature of 460°C and a V/III ratio of 320 an optimum oxide thickness of 9 ± 3 Å is found.
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spelling pubmed-32120552011-11-09 Influence of the oxide layer for growth of self-assisted InAs nanowires on Si(111) Madsen, Morten Hannibal Aagesen, Martin Krogstrup, Peter Sørensen, Claus Nygård, Jesper Nanoscale Res Lett Nano Express The growth of self-assisted InAs nanowires (NWs) by molecular beam epitaxy (MBE) on Si(111) is studied for different growth parameters and substrate preparations. The thickness of the oxide layer present on the Si(111) surface is observed to play a dominant role. Systematic use of different pre-treatment methods provides information on the influence of the oxide on the NW morphology and growth rates, which can be used for optimizing the growth conditions. We show that it is possible to obtain 100% growth of vertical NWs and no parasitic bulk structures between the NWs by optimizing the oxide thickness. For a growth temperature of 460°C and a V/III ratio of 320 an optimum oxide thickness of 9 ± 3 Å is found. Springer 2011-08-31 /pmc/articles/PMC3212055/ /pubmed/21880130 http://dx.doi.org/10.1186/1556-276X-6-516 Text en Copyright ©2011 Madsen et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Madsen, Morten Hannibal
Aagesen, Martin
Krogstrup, Peter
Sørensen, Claus
Nygård, Jesper
Influence of the oxide layer for growth of self-assisted InAs nanowires on Si(111)
title Influence of the oxide layer for growth of self-assisted InAs nanowires on Si(111)
title_full Influence of the oxide layer for growth of self-assisted InAs nanowires on Si(111)
title_fullStr Influence of the oxide layer for growth of self-assisted InAs nanowires on Si(111)
title_full_unstemmed Influence of the oxide layer for growth of self-assisted InAs nanowires on Si(111)
title_short Influence of the oxide layer for growth of self-assisted InAs nanowires on Si(111)
title_sort influence of the oxide layer for growth of self-assisted inas nanowires on si(111)
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212055/
https://www.ncbi.nlm.nih.gov/pubmed/21880130
http://dx.doi.org/10.1186/1556-276X-6-516
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