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Influence of the oxide layer for growth of self-assisted InAs nanowires on Si(111)

The growth of self-assisted InAs nanowires (NWs) by molecular beam epitaxy (MBE) on Si(111) is studied for different growth parameters and substrate preparations. The thickness of the oxide layer present on the Si(111) surface is observed to play a dominant role. Systematic use of different pre-trea...

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Detalles Bibliográficos
Autores principales:	Madsen, Morten Hannibal, Aagesen, Martin, Krogstrup, Peter, Sørensen, Claus, Nygård, Jesper
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer 2011
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212055/ https://www.ncbi.nlm.nih.gov/pubmed/21880130 http://dx.doi.org/10.1186/1556-276X-6-516

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