Selective formation of tungsten nanowires

We report on a process for fabricating self-aligned tungsten (W) nanowires with polycrystalline silicon core. Tungsten nanowires as thin as 10 nm were formed by utilizing polysilicon sidewall transfer technology followed by selective deposition of tungsten by chemical vapor deposition (CVD) using WF...

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Detalles Bibliográficos
Autores principales: Bien, Daniel CS, Saman, Rahimah Mohd, Badaruddin, Siti Aishah Mohamad, Lee, Hing Wah
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212081/
https://www.ncbi.nlm.nih.gov/pubmed/21970543
http://dx.doi.org/10.1186/1556-276X-6-543

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212081/
https://www.ncbi.nlm.nih.gov/pubmed/21970543
http://dx.doi.org/10.1186/1556-276X-6-543

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