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The Microscopic Origin of Residual Stress for Flat Self-Actuating Piezoelectric Cantilevers

In this study, flat piezoelectric microcantilevers were fabricated under low-stress Pb(Zr(0.52)Ti(0.48))O(3) (PZT) film conditions. They were analyzed using the Raman spectrum and wafer curvature methods. Based on the residual stress analysis, we found that a thickness of 1 μm was critical, since st...

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Detalles Bibliográficos
Autores principales: Lee, Jeong Hoon, Hwang, Kyo Seon, Kim, Tae Song
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212087/
https://www.ncbi.nlm.nih.gov/pubmed/27502677
http://dx.doi.org/10.1007/s11671-010-9810-z

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