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Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method

Cracks appeared in GaN epitaxial layers which were grown by a novel method combining metal organic vapor-phase epitaxy (MOCVD) and hydride vapor-phase epitaxy (HVPE) in one chamber. The origin of cracks in a 22-μm thick GaN film was fully investigated by high-resolution X-ray diffraction (XRD), micr...

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Autores principales: Liu, Jianming, Liu, Xianlin, Li, Chengming, Wei, Hongyuan, Guo, Yan, Jiao, Chunmei, Li, Zhiwei, Xu, Xiaoqing, Song, Huaping, Yang, Shaoyan, Zhu, Qinsen, Wang, Zhanguo, Yang, Anli, Yang, Tieying, Wang, Huanhua
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212216/
https://www.ncbi.nlm.nih.gov/pubmed/21711601
http://dx.doi.org/10.1186/1556-276X-6-69
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author Liu, Jianming
Liu, Xianlin
Li, Chengming
Wei, Hongyuan
Guo, Yan
Jiao, Chunmei
Li, Zhiwei
Xu, Xiaoqing
Song, Huaping
Yang, Shaoyan
Zhu, Qinsen
Wang, Zhanguo
Yang, Anli
Yang, Tieying
Wang, Huanhua
author_facet Liu, Jianming
Liu, Xianlin
Li, Chengming
Wei, Hongyuan
Guo, Yan
Jiao, Chunmei
Li, Zhiwei
Xu, Xiaoqing
Song, Huaping
Yang, Shaoyan
Zhu, Qinsen
Wang, Zhanguo
Yang, Anli
Yang, Tieying
Wang, Huanhua
author_sort Liu, Jianming
collection PubMed
description Cracks appeared in GaN epitaxial layers which were grown by a novel method combining metal organic vapor-phase epitaxy (MOCVD) and hydride vapor-phase epitaxy (HVPE) in one chamber. The origin of cracks in a 22-μm thick GaN film was fully investigated by high-resolution X-ray diffraction (XRD), micro-Raman spectra, and scanning electron microscopy (SEM). Many cracks under the surface were first observed by SEM after etching for 10 min. By investigating the cross section of the sample with high-resolution micro-Raman spectra, the distribution of the stress along the depth was determined. From the interface of the film/substrate to the top surface of the film, several turnings were found. A large compressive stress existed at the interface. The stress went down as the detecting area was moved up from the interface to the overlayer, and it was maintained at a large value for a long depth area. Then it went down again, and it finally increased near the top surface. The cross-section of the film was observed after cleaving and etching for 2 min. It was found that the crystal quality of the healed part was nearly the same as the uncracked region. This indicated that cracking occurred in the growth, when the tensile stress accumulated and reached the critical value. Moreover, the cracks would heal because of high lateral growth rate.
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spelling pubmed-32122162011-11-09 Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method Liu, Jianming Liu, Xianlin Li, Chengming Wei, Hongyuan Guo, Yan Jiao, Chunmei Li, Zhiwei Xu, Xiaoqing Song, Huaping Yang, Shaoyan Zhu, Qinsen Wang, Zhanguo Yang, Anli Yang, Tieying Wang, Huanhua Nanoscale Res Lett Nano Express Cracks appeared in GaN epitaxial layers which were grown by a novel method combining metal organic vapor-phase epitaxy (MOCVD) and hydride vapor-phase epitaxy (HVPE) in one chamber. The origin of cracks in a 22-μm thick GaN film was fully investigated by high-resolution X-ray diffraction (XRD), micro-Raman spectra, and scanning electron microscopy (SEM). Many cracks under the surface were first observed by SEM after etching for 10 min. By investigating the cross section of the sample with high-resolution micro-Raman spectra, the distribution of the stress along the depth was determined. From the interface of the film/substrate to the top surface of the film, several turnings were found. A large compressive stress existed at the interface. The stress went down as the detecting area was moved up from the interface to the overlayer, and it was maintained at a large value for a long depth area. Then it went down again, and it finally increased near the top surface. The cross-section of the film was observed after cleaving and etching for 2 min. It was found that the crystal quality of the healed part was nearly the same as the uncracked region. This indicated that cracking occurred in the growth, when the tensile stress accumulated and reached the critical value. Moreover, the cracks would heal because of high lateral growth rate. Springer 2011-01-12 /pmc/articles/PMC3212216/ /pubmed/21711601 http://dx.doi.org/10.1186/1556-276X-6-69 Text en Copyright ©2011 Liu et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Liu, Jianming
Liu, Xianlin
Li, Chengming
Wei, Hongyuan
Guo, Yan
Jiao, Chunmei
Li, Zhiwei
Xu, Xiaoqing
Song, Huaping
Yang, Shaoyan
Zhu, Qinsen
Wang, Zhanguo
Yang, Anli
Yang, Tieying
Wang, Huanhua
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
title Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
title_full Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
title_fullStr Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
title_full_unstemmed Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
title_short Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
title_sort investigation of cracks in gan films grown by combined hydride and metal organic vapor-phase epitaxial method
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212216/
https://www.ncbi.nlm.nih.gov/pubmed/21711601
http://dx.doi.org/10.1186/1556-276X-6-69
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