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Ultra-steep side facets in multi-faceted SiGe/Si(001) Stranski-Krastanow islands

For the prototypical Ge/Si(001) system, we show that at high growth temperature a new type of Stranski-Krastanow islands is formed with side facets steeper than {111} and high aspect ratio. Nano-goniometric analysis of the island shapes reveals the presence of six new facet groups in addition to tho...

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Detalles Bibliográficos
Autores principales:	Brehm, Moritz, Lichtenberger, Herbert, Fromherz, Thomas, Springholz, Gunther
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer 2011
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212218/ https://www.ncbi.nlm.nih.gov/pubmed/21711579 http://dx.doi.org/10.1186/1556-276X-6-70

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