Improvement of performance of InAs quantum dot solar cell by inserting thin AlAs layers

A new measure to enhance the performance of InAs quantum dot solar cell is proposed and measured. One monolayer AlAs is deposited on top of InAs quantum dots (QDs) in multistack solar cells. The devices were fabricated by molecular beam epitaxy. In situ annealing was intended to tune the QD density....

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Detalles Bibliográficos
Autores principales: Hu, Dongzhi, McPheeters, Claiborne CO, Yu, Edward T, Schaadt, Daniel M
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212232/
https://www.ncbi.nlm.nih.gov/pubmed/21711628
http://dx.doi.org/10.1186/1556-276X-6-83

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212232/
https://www.ncbi.nlm.nih.gov/pubmed/21711628
http://dx.doi.org/10.1186/1556-276X-6-83

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