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Improvement of performance of InAs quantum dot solar cell by inserting thin AlAs layers
A new measure to enhance the performance of InAs quantum dot solar cell is proposed and measured. One monolayer AlAs is deposited on top of InAs quantum dots (QDs) in multistack solar cells. The devices were fabricated by molecular beam epitaxy. In situ annealing was intended to tune the QD density....
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2011
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212232/ https://www.ncbi.nlm.nih.gov/pubmed/21711628 http://dx.doi.org/10.1186/1556-276X-6-83 |