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Electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride
The electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride is studied by measuring the voltage and temperature dependences of the current. The microstructure of the network is investigated by cross-sectional transmission electron microscopy. The multi-walle...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2011
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212237/ https://www.ncbi.nlm.nih.gov/pubmed/21711608 http://dx.doi.org/10.1186/1556-276X-6-88 |
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author | Stavarache, Ionel Lepadatu, Ana-Maria Teodorescu, Valentin Serban Ciurea, Magdalena Lidia Iancu, Vladimir Dragoman, Mircea Konstantinidis, George Buiculescu, Raluca |
author_facet | Stavarache, Ionel Lepadatu, Ana-Maria Teodorescu, Valentin Serban Ciurea, Magdalena Lidia Iancu, Vladimir Dragoman, Mircea Konstantinidis, George Buiculescu, Raluca |
author_sort | Stavarache, Ionel |
collection | PubMed |
description | The electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride is studied by measuring the voltage and temperature dependences of the current. The microstructure of the network is investigated by cross-sectional transmission electron microscopy. The multi-walled carbon nanotube network has an uniform spatial extension in the silicon nitride matrix. The current-voltage and resistance-temperature characteristics are both linear, proving the metallic behavior of the network. The I-V curves present oscillations that are further analyzed by computing the conductance-voltage characteristics. The conductance presents minima and maxima that appear at the same voltage for both bias polarities, at both 20 and 298 K, and that are not periodic. These oscillations are interpreted as due to percolation processes. The voltage percolation thresholds are identified with the conductance minima. |
format | Online Article Text |
id | pubmed-3212237 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2011 |
publisher | Springer |
record_format | MEDLINE/PubMed |
spelling | pubmed-32122372011-11-09 Electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride Stavarache, Ionel Lepadatu, Ana-Maria Teodorescu, Valentin Serban Ciurea, Magdalena Lidia Iancu, Vladimir Dragoman, Mircea Konstantinidis, George Buiculescu, Raluca Nanoscale Res Lett Nano Express The electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride is studied by measuring the voltage and temperature dependences of the current. The microstructure of the network is investigated by cross-sectional transmission electron microscopy. The multi-walled carbon nanotube network has an uniform spatial extension in the silicon nitride matrix. The current-voltage and resistance-temperature characteristics are both linear, proving the metallic behavior of the network. The I-V curves present oscillations that are further analyzed by computing the conductance-voltage characteristics. The conductance presents minima and maxima that appear at the same voltage for both bias polarities, at both 20 and 298 K, and that are not periodic. These oscillations are interpreted as due to percolation processes. The voltage percolation thresholds are identified with the conductance minima. Springer 2011-01-17 /pmc/articles/PMC3212237/ /pubmed/21711608 http://dx.doi.org/10.1186/1556-276X-6-88 Text en Copyright ©2011 Stavarache et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Nano Express Stavarache, Ionel Lepadatu, Ana-Maria Teodorescu, Valentin Serban Ciurea, Magdalena Lidia Iancu, Vladimir Dragoman, Mircea Konstantinidis, George Buiculescu, Raluca Electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride |
title | Electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride |
title_full | Electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride |
title_fullStr | Electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride |
title_full_unstemmed | Electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride |
title_short | Electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride |
title_sort | electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride |
topic | Nano Express |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212237/ https://www.ncbi.nlm.nih.gov/pubmed/21711608 http://dx.doi.org/10.1186/1556-276X-6-88 |
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