STEM nanoanalysis of Au/Pt/Ti-Si(3)N(4 )interfacial defects and reactions during local stress of SiGe HBTs

A new insight on the behavior of metal contact-insulating interfaces in SiGe heterojunction bipolar transistor is given by high-performance aberration-corrected scanning transmission electron microscopy (STEM) analysis tools equipped with sub-nanometric probe size. It is demonstrated that the presen...

Descripción completa

Detalles Bibliográficos
Autores principales: Alaeddine, Ali, Genevois, Cécile, Chevalier, Laurence, Daoud, Kaouther
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3218260/
https://www.ncbi.nlm.nih.gov/pubmed/22040059
http://dx.doi.org/10.1186/1556-276X-6-574

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3218260/
https://www.ncbi.nlm.nih.gov/pubmed/22040059
http://dx.doi.org/10.1186/1556-276X-6-574

Ejemplares similares