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STEM nanoanalysis of Au/Pt/Ti-Si(3)N(4 )interfacial defects and reactions during local stress of SiGe HBTs

A new insight on the behavior of metal contact-insulating interfaces in SiGe heterojunction bipolar transistor is given by high-performance aberration-corrected scanning transmission electron microscopy (STEM) analysis tools equipped with sub-nanometric probe size. It is demonstrated that the presen...

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Detalles Bibliográficos
Autores principales:	Alaeddine, Ali, Genevois, Cécile, Chevalier, Laurence, Daoud, Kaouther
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer 2011
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3218260/ https://www.ncbi.nlm.nih.gov/pubmed/22040059 http://dx.doi.org/10.1186/1556-276X-6-574

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