Characterization of a Photodiode Coupled with a Si Nanowire-FET on a Plastic Substrate

In this study, a laterally coupled device composed of a photodiode and a Si nanowires-field-effect transistor (NWs-FET) is constructed on a plastic substrate and the coupled device is characterized. The photodiode is made of p-type Si NWs and an n-type ZnO film. The Si NWs-FET is connected electrica...

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Detalles Bibliográficos
Autores principales: Kwak, Kiyeol, Cho, Kyoungah, Kim, Sangsig
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Molecular Diversity Preservation International (MDPI) 2010
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3230961/
https://www.ncbi.nlm.nih.gov/pubmed/22163398
http://dx.doi.org/10.3390/s101009118
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author Kwak, Kiyeol
Cho, Kyoungah
Kim, Sangsig
author_facet Kwak, Kiyeol
Cho, Kyoungah
Kim, Sangsig
author_sort Kwak, Kiyeol
collection PubMed
description In this study, a laterally coupled device composed of a photodiode and a Si nanowires-field-effect transistor (NWs-FET) is constructed on a plastic substrate and the coupled device is characterized. The photodiode is made of p-type Si NWs and an n-type ZnO film. The Si NWs-FET is connected electrically to the photodiode in order to enhance the latter’s photocurrent efficiency by adjusting the gate voltage of the FET. When the FET is switched on by biasing a gate voltage of −9 V, the photocurrent efficiency of the photodiode is three times higher than that when the FET is switched off by biasing a gate voltage of 0 V.
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spelling pubmed-32309612011-12-07 Characterization of a Photodiode Coupled with a Si Nanowire-FET on a Plastic Substrate Kwak, Kiyeol Cho, Kyoungah Kim, Sangsig Sensors (Basel) Article In this study, a laterally coupled device composed of a photodiode and a Si nanowires-field-effect transistor (NWs-FET) is constructed on a plastic substrate and the coupled device is characterized. The photodiode is made of p-type Si NWs and an n-type ZnO film. The Si NWs-FET is connected electrically to the photodiode in order to enhance the latter’s photocurrent efficiency by adjusting the gate voltage of the FET. When the FET is switched on by biasing a gate voltage of −9 V, the photocurrent efficiency of the photodiode is three times higher than that when the FET is switched off by biasing a gate voltage of 0 V. Molecular Diversity Preservation International (MDPI) 2010-10-12 /pmc/articles/PMC3230961/ /pubmed/22163398 http://dx.doi.org/10.3390/s101009118 Text en © 2010 by the authors; licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/3.0/).
spellingShingle Article
Kwak, Kiyeol
Cho, Kyoungah
Kim, Sangsig
Characterization of a Photodiode Coupled with a Si Nanowire-FET on a Plastic Substrate
title Characterization of a Photodiode Coupled with a Si Nanowire-FET on a Plastic Substrate
title_full Characterization of a Photodiode Coupled with a Si Nanowire-FET on a Plastic Substrate
title_fullStr Characterization of a Photodiode Coupled with a Si Nanowire-FET on a Plastic Substrate
title_full_unstemmed Characterization of a Photodiode Coupled with a Si Nanowire-FET on a Plastic Substrate
title_short Characterization of a Photodiode Coupled with a Si Nanowire-FET on a Plastic Substrate
title_sort characterization of a photodiode coupled with a si nanowire-fet on a plastic substrate
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3230961/
https://www.ncbi.nlm.nih.gov/pubmed/22163398
http://dx.doi.org/10.3390/s101009118
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AT chokyoungah characterizationofaphotodiodecoupledwithasinanowirefetonaplasticsubstrate
AT kimsangsig characterizationofaphotodiodecoupledwithasinanowirefetonaplasticsubstrate

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