Large Lateral Photovoltaic Effect in Metal-(Oxide-) Semiconductor Structures

The lateral photovoltaic effect (LPE) can be used in position-sensitive detectors to detect very small displacements due to its output of lateral photovoltage changing linearly with light spot position. In this review, we will summarize some of our recent works regarding LPE in metal-semiconductor a...

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Detalles Bibliográficos
Autores principales: Yu, Chongqi, Wang, Hui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Molecular Diversity Preservation International (MDPI) 2010
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3231024/
https://www.ncbi.nlm.nih.gov/pubmed/22163463
http://dx.doi.org/10.3390/s101110155
Descripción
Sumario:The lateral photovoltaic effect (LPE) can be used in position-sensitive detectors to detect very small displacements due to its output of lateral photovoltage changing linearly with light spot position. In this review, we will summarize some of our recent works regarding LPE in metal-semiconductor and metal-oxide-semiconductor structures, and give a theoretical model of LPE in these two structures.

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