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Large Lateral Photovoltaic Effect in Metal-(Oxide-) Semiconductor Structures
The lateral photovoltaic effect (LPE) can be used in position-sensitive detectors to detect very small displacements due to its output of lateral photovoltage changing linearly with light spot position. In this review, we will summarize some of our recent works regarding LPE in metal-semiconductor a...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Molecular Diversity Preservation International (MDPI)
2010
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3231024/ https://www.ncbi.nlm.nih.gov/pubmed/22163463 http://dx.doi.org/10.3390/s101110155 |