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A Standard CMOS Humidity Sensor without Post-Processing
A 2 μW power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a Intervia Photodielectric 8023–10 hu...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Molecular Diversity Preservation International (MDPI)
2011
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3231417/ https://www.ncbi.nlm.nih.gov/pubmed/22163949 http://dx.doi.org/10.3390/s110606197 |
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author | Nizhnik, Oleg Higuchi, Kohei Maenaka, Kazusuke |
author_facet | Nizhnik, Oleg Higuchi, Kohei Maenaka, Kazusuke |
author_sort | Nizhnik, Oleg |
collection | PubMed |
description | A 2 μW power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a Intervia Photodielectric 8023–10 humidity-sensitive layer, and a CMOS capacitance to voltage converter. |
format | Online Article Text |
id | pubmed-3231417 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2011 |
publisher | Molecular Diversity Preservation International (MDPI) |
record_format | MEDLINE/PubMed |
spelling | pubmed-32314172011-12-07 A Standard CMOS Humidity Sensor without Post-Processing Nizhnik, Oleg Higuchi, Kohei Maenaka, Kazusuke Sensors (Basel) Article A 2 μW power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a Intervia Photodielectric 8023–10 humidity-sensitive layer, and a CMOS capacitance to voltage converter. Molecular Diversity Preservation International (MDPI) 2011-06-08 /pmc/articles/PMC3231417/ /pubmed/22163949 http://dx.doi.org/10.3390/s110606197 Text en © 2011 by the authors; licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/3.0/). |
spellingShingle | Article Nizhnik, Oleg Higuchi, Kohei Maenaka, Kazusuke A Standard CMOS Humidity Sensor without Post-Processing |
title | A Standard CMOS Humidity Sensor without Post-Processing |
title_full | A Standard CMOS Humidity Sensor without Post-Processing |
title_fullStr | A Standard CMOS Humidity Sensor without Post-Processing |
title_full_unstemmed | A Standard CMOS Humidity Sensor without Post-Processing |
title_short | A Standard CMOS Humidity Sensor without Post-Processing |
title_sort | standard cmos humidity sensor without post-processing |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3231417/ https://www.ncbi.nlm.nih.gov/pubmed/22163949 http://dx.doi.org/10.3390/s110606197 |
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