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Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control

The quantum-confined stark effect induced by polarization has significant effects on the optical properties of nitride heterostructures. In order to improve the emission efficiency of GaN/AlN quantum dots [QDs], a novel epitaxial structure is proposed: a partially relaxed GaN layer followed by an Al...

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Detalles Bibliográficos
Autores principales:	Niu, Lang, Hao, Zhibiao, Hu, Jiannan, Hu, Yibin, Wang, Lai, Luo, Yi
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer 2011
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3237329/ https://www.ncbi.nlm.nih.gov/pubmed/22136595 http://dx.doi.org/10.1186/1556-276X-6-611

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