Dependence of the electrical and optical properties on growth interruption in AlAs/In(0.53)Ga(0.47)As/InAs resonant tunneling diodes

The dependence of interface roughness of pseudomorphic AlAs/In(0.53)Ga(0.47)As/InAs resonant tunneling diodes [RTDs] grown by molecular beam epitaxy on interruption time was studied by current-voltage [I-V] characteristics, photoluminescence [PL] spectroscopy, and transmission electron microscopy [T...

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Detalles Bibliográficos
Autores principales: Zhang, Yang, Guan, Min, Liu, Xingfang, Zeng, Yiping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3238496/
https://www.ncbi.nlm.nih.gov/pubmed/22112249
http://dx.doi.org/10.1186/1556-276X-6-603
Descripción
Sumario:The dependence of interface roughness of pseudomorphic AlAs/In(0.53)Ga(0.47)As/InAs resonant tunneling diodes [RTDs] grown by molecular beam epitaxy on interruption time was studied by current-voltage [I-V] characteristics, photoluminescence [PL] spectroscopy, and transmission electron microscopy [TEM]. We have observed that a splitting in the quantum-well PL due to island formation in the quantum well is sensitive to growth interruption at the AlAs/In(0.53)Ga(0.47)As interfaces. TEM images also show flatter interfaces with a few islands which only occur by applying an optimum value of interruption time. The symmetry of I-V characteristics of RTDs with PL and TEM results is consistent because tunneling current is highly dependent on barrier thickness and interface roughness.

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