Dependence of the electrical and optical properties on growth interruption in AlAs/In(0.53)Ga(0.47)As/InAs resonant tunneling diodes

The dependence of interface roughness of pseudomorphic AlAs/In(0.53)Ga(0.47)As/InAs resonant tunneling diodes [RTDs] grown by molecular beam epitaxy on interruption time was studied by current-voltage [I-V] characteristics, photoluminescence [PL] spectroscopy, and transmission electron microscopy [T...

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Detalles Bibliográficos
Autores principales: Zhang, Yang, Guan, Min, Liu, Xingfang, Zeng, Yiping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3238496/
https://www.ncbi.nlm.nih.gov/pubmed/22112249
http://dx.doi.org/10.1186/1556-276X-6-603
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author Zhang, Yang
Guan, Min
Liu, Xingfang
Zeng, Yiping
author_facet Zhang, Yang
Guan, Min
Liu, Xingfang
Zeng, Yiping
author_sort Zhang, Yang
collection PubMed
description The dependence of interface roughness of pseudomorphic AlAs/In(0.53)Ga(0.47)As/InAs resonant tunneling diodes [RTDs] grown by molecular beam epitaxy on interruption time was studied by current-voltage [I-V] characteristics, photoluminescence [PL] spectroscopy, and transmission electron microscopy [TEM]. We have observed that a splitting in the quantum-well PL due to island formation in the quantum well is sensitive to growth interruption at the AlAs/In(0.53)Ga(0.47)As interfaces. TEM images also show flatter interfaces with a few islands which only occur by applying an optimum value of interruption time. The symmetry of I-V characteristics of RTDs with PL and TEM results is consistent because tunneling current is highly dependent on barrier thickness and interface roughness.
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spelling pubmed-32384962011-12-19 Dependence of the electrical and optical properties on growth interruption in AlAs/In(0.53)Ga(0.47)As/InAs resonant tunneling diodes Zhang, Yang Guan, Min Liu, Xingfang Zeng, Yiping Nanoscale Res Lett Nano Express The dependence of interface roughness of pseudomorphic AlAs/In(0.53)Ga(0.47)As/InAs resonant tunneling diodes [RTDs] grown by molecular beam epitaxy on interruption time was studied by current-voltage [I-V] characteristics, photoluminescence [PL] spectroscopy, and transmission electron microscopy [TEM]. We have observed that a splitting in the quantum-well PL due to island formation in the quantum well is sensitive to growth interruption at the AlAs/In(0.53)Ga(0.47)As interfaces. TEM images also show flatter interfaces with a few islands which only occur by applying an optimum value of interruption time. The symmetry of I-V characteristics of RTDs with PL and TEM results is consistent because tunneling current is highly dependent on barrier thickness and interface roughness. Springer 2011-11-23 /pmc/articles/PMC3238496/ /pubmed/22112249 http://dx.doi.org/10.1186/1556-276X-6-603 Text en Copyright ©2011 Zhang et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Zhang, Yang
Guan, Min
Liu, Xingfang
Zeng, Yiping
Dependence of the electrical and optical properties on growth interruption in AlAs/In(0.53)Ga(0.47)As/InAs resonant tunneling diodes
title Dependence of the electrical and optical properties on growth interruption in AlAs/In(0.53)Ga(0.47)As/InAs resonant tunneling diodes
title_full Dependence of the electrical and optical properties on growth interruption in AlAs/In(0.53)Ga(0.47)As/InAs resonant tunneling diodes
title_fullStr Dependence of the electrical and optical properties on growth interruption in AlAs/In(0.53)Ga(0.47)As/InAs resonant tunneling diodes
title_full_unstemmed Dependence of the electrical and optical properties on growth interruption in AlAs/In(0.53)Ga(0.47)As/InAs resonant tunneling diodes
title_short Dependence of the electrical and optical properties on growth interruption in AlAs/In(0.53)Ga(0.47)As/InAs resonant tunneling diodes
title_sort dependence of the electrical and optical properties on growth interruption in alas/in(0.53)ga(0.47)as/inas resonant tunneling diodes
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3238496/
https://www.ncbi.nlm.nih.gov/pubmed/22112249
http://dx.doi.org/10.1186/1556-276X-6-603
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AT liuxingfang dependenceoftheelectricalandopticalpropertiesongrowthinterruptioninalasin053ga047asinasresonanttunnelingdiodes
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