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Moving liquids with light: Photoelectrowetting on semiconductors

By linking semiconductor physics and wetting phenomena a brand new effect termed “photoelectrowetting-on-semiconductors” is demonstrated here for a conducting droplet resting on an insulator-semiconductor stack. Optical generation of carriers in the space-charge region of the underlying semiconducto...

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Detalles Bibliográficos
Autor principal: Arscott, Steve
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2011
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3240946/
https://www.ncbi.nlm.nih.gov/pubmed/22355699
http://dx.doi.org/10.1038/srep00184
Descripción
Sumario:By linking semiconductor physics and wetting phenomena a brand new effect termed “photoelectrowetting-on-semiconductors” is demonstrated here for a conducting droplet resting on an insulator-semiconductor stack. Optical generation of carriers in the space-charge region of the underlying semiconductor alters the capacitance of the liquid-insulator-semiconductor stack; the result of this is a modification of the wetting contact angle of the droplet upon illumination using above band gap light. The effect is demonstrated using commercial silicon wafers, both n- and p-type having a doping range spanning four orders of magnitude (6×10(14)−8×10(18) cm(−3)), coated with a commercial amorphous fluoropolymer insulating film (Teflon®). Impedance measurements confirm that the observations are semiconductor space-charge related effects. The impact of the work could lead to new silicon-based technologies in areas such as Laboratory-on-a-Chip, Microfluidics and Optofluidics.