Cargando…
Observation and Measurement of Negative Differential Resistance on PtSi Schottky Junctions on Porous Silicon
Nanosize porous Si is made by two step controlled etching of Si. The first etching step is carried on the Si surface and the second is performed after deposition of 75 Å of platinum on the formed surface. A platinum silicide structure with a size of less than 25 nm is formed on the porous Si surface...
Autores principales: | Banihashemian, Seyedeh Maryam, Hajghassem, Hassan, Erfanian, Alireza, Aliahmadi, Majidreza, Mohtashamifar, Mansor, Mosakazemi, Seyed Mohamadhosein |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Molecular Diversity Preservation International (MDPI)
2010
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3244001/ https://www.ncbi.nlm.nih.gov/pubmed/22205855 http://dx.doi.org/10.3390/s100201012 |
Ejemplares similares
-
Low Magnetic Field Detection Using a CuPt Nano Structure Made on a SiO(2)/Si Structure
por: Hajghassem, Hassan, et al.
Publicado: (2009) -
Porous anodic alumina on galvanically grown PtSi layer for application in template-assisted Si nanowire growth
por: Michelakaki, Irini, et al.
Publicado: (2011) -
Batch Fabrication of Wear-Resistant and Conductive Probe with PtSi Tip
por: Liu, Meijie, et al.
Publicado: (2021) -
Physical Investigations on Bias-Free, Photo-Induced Hall Sensors Based on Pt/GaAs and Pt/Si Schottky Junctions
por: Wang, Xiaolei, et al.
Publicado: (2021) -
Junction investigation of graphene/silicon Schottky diodes
por: Mohammed, Muatez, et al.
Publicado: (2012)