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Mechanical Deformation Induced in Si and GaN Under Berkovich Nanoindentation
Details of Berkovich nanoindentation-induced mechanical deformation mechanisms of single-crystal Si(100) and the metal-organic chemical-vapor deposition (MOCVD) derived GaN thin films have been systematic investigated by means of micro-Raman spectroscopy and cross-sectional transmission electron mic...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Springer
2007
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3244777/ http://dx.doi.org/10.1007/s11671-007-9106-0 |