Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates

The evolution of InAs quantum dot (QD) formation is studied on GaAs ring-like nanostructures fabricated by droplet homo-epitaxy. This growth mode, exclusively performed by a hybrid approach of droplet homo-epitaxy and Stransky-Krastanor (S-K) based QD self-assembly, enables one to form new QD morpho...

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Detalles Bibliográficos
Autores principales: Strom, NW, Wang, Zh M, Lee, JH, AbuWaar, ZY, Mazur, Yu I, Salamo, GJ
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2007
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3245573/
http://dx.doi.org/10.1007/s11671-007-9040-1
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author Strom, NW
Wang, Zh M
Lee, JH
AbuWaar, ZY
Mazur, Yu I
Salamo, GJ
author_facet Strom, NW
Wang, Zh M
Lee, JH
AbuWaar, ZY
Mazur, Yu I
Salamo, GJ
author_sort Strom, NW
collection PubMed
description The evolution of InAs quantum dot (QD) formation is studied on GaAs ring-like nanostructures fabricated by droplet homo-epitaxy. This growth mode, exclusively performed by a hybrid approach of droplet homo-epitaxy and Stransky-Krastanor (S-K) based QD self-assembly, enables one to form new QD morphologies that may find use in optoelectronic applications. Increased deposition of InAs on the GaAs ring first produced a QD in the hole followed by QDs around the GaAs ring and on the GaAs (100) surface. This behavior indicates that the QDs prefer to nucleate at locations of high monolayer (ML) step density.
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spelling pubmed-32455732011-12-29 Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates Strom, NW Wang, Zh M Lee, JH AbuWaar, ZY Mazur, Yu I Salamo, GJ Nanoscale Res Lett Nano Express The evolution of InAs quantum dot (QD) formation is studied on GaAs ring-like nanostructures fabricated by droplet homo-epitaxy. This growth mode, exclusively performed by a hybrid approach of droplet homo-epitaxy and Stransky-Krastanor (S-K) based QD self-assembly, enables one to form new QD morphologies that may find use in optoelectronic applications. Increased deposition of InAs on the GaAs ring first produced a QD in the hole followed by QDs around the GaAs ring and on the GaAs (100) surface. This behavior indicates that the QDs prefer to nucleate at locations of high monolayer (ML) step density. Springer 2007-02-08 /pmc/articles/PMC3245573/ http://dx.doi.org/10.1007/s11671-007-9040-1 Text en Copyright ©2007 to the authors
spellingShingle Nano Express
Strom, NW
Wang, Zh M
Lee, JH
AbuWaar, ZY
Mazur, Yu I
Salamo, GJ
Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates
title Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates
title_full Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates
title_fullStr Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates
title_full_unstemmed Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates
title_short Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates
title_sort self-assembled inas quantum dot formation on gaas ring-like nanostructure templates
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3245573/
http://dx.doi.org/10.1007/s11671-007-9040-1
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AT mazuryui selfassembledinasquantumdotformationongaasringlikenanostructuretemplates
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