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Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers

Ten-layer InAs/In(0.15)Ga(0.85)As quantum dot (QD) laser structures have been grown using molecular beam epitaxy (MBE) on GaAs (001) substrate. Using the pulsed anodic oxidation technique, narrow (2 μm) ridge waveguide (RWG) InAs QD lasers have been fabricated. Under continuous wave operation, the I...

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Detalles Bibliográficos
Autores principales: Cao, Q, Yoon, SF, Liu, CY, Ngo, CY
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2007
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3246353/
http://dx.doi.org/10.1007/s11671-007-9066-4
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author Cao, Q
Yoon, SF
Liu, CY
Ngo, CY
author_facet Cao, Q
Yoon, SF
Liu, CY
Ngo, CY
author_sort Cao, Q
collection PubMed
description Ten-layer InAs/In(0.15)Ga(0.85)As quantum dot (QD) laser structures have been grown using molecular beam epitaxy (MBE) on GaAs (001) substrate. Using the pulsed anodic oxidation technique, narrow (2 μm) ridge waveguide (RWG) InAs QD lasers have been fabricated. Under continuous wave operation, the InAs QD laser (2 × 2,000 μm(2)) delivered total output power of up to 272.6 mW at 10 °C at 1.3 μm. Under pulsed operation, where the device heating is greatly minimized, the InAs QD laser (2 × 2,000 μm(2)) delivered extremely high output power (both facets) of up to 1.22 W at 20 °C, at high external differential quantum efficiency of 96%. Far field pattern measurement of the 2-μm RWG InAs QD lasers showed single lateral mode operation.
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spelling pubmed-32463532011-12-29 Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers Cao, Q Yoon, SF Liu, CY Ngo, CY Nanoscale Res Lett Nano Express Ten-layer InAs/In(0.15)Ga(0.85)As quantum dot (QD) laser structures have been grown using molecular beam epitaxy (MBE) on GaAs (001) substrate. Using the pulsed anodic oxidation technique, narrow (2 μm) ridge waveguide (RWG) InAs QD lasers have been fabricated. Under continuous wave operation, the InAs QD laser (2 × 2,000 μm(2)) delivered total output power of up to 272.6 mW at 10 °C at 1.3 μm. Under pulsed operation, where the device heating is greatly minimized, the InAs QD laser (2 × 2,000 μm(2)) delivered extremely high output power (both facets) of up to 1.22 W at 20 °C, at high external differential quantum efficiency of 96%. Far field pattern measurement of the 2-μm RWG InAs QD lasers showed single lateral mode operation. Springer 2007-06-14 /pmc/articles/PMC3246353/ http://dx.doi.org/10.1007/s11671-007-9066-4 Text en Copyright ©2007 to the authors
spellingShingle Nano Express
Cao, Q
Yoon, SF
Liu, CY
Ngo, CY
Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers
title Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers
title_full Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers
title_fullStr Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers
title_full_unstemmed Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers
title_short Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers
title_sort narrow ridge waveguide high power single mode 1.3-μm inas/ingaas ten-layer quantum dot lasers
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3246353/
http://dx.doi.org/10.1007/s11671-007-9066-4
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