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Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers
Ten-layer InAs/In(0.15)Ga(0.85)As quantum dot (QD) laser structures have been grown using molecular beam epitaxy (MBE) on GaAs (001) substrate. Using the pulsed anodic oxidation technique, narrow (2 μm) ridge waveguide (RWG) InAs QD lasers have been fabricated. Under continuous wave operation, the I...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2007
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3246353/ http://dx.doi.org/10.1007/s11671-007-9066-4 |
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author | Cao, Q Yoon, SF Liu, CY Ngo, CY |
author_facet | Cao, Q Yoon, SF Liu, CY Ngo, CY |
author_sort | Cao, Q |
collection | PubMed |
description | Ten-layer InAs/In(0.15)Ga(0.85)As quantum dot (QD) laser structures have been grown using molecular beam epitaxy (MBE) on GaAs (001) substrate. Using the pulsed anodic oxidation technique, narrow (2 μm) ridge waveguide (RWG) InAs QD lasers have been fabricated. Under continuous wave operation, the InAs QD laser (2 × 2,000 μm(2)) delivered total output power of up to 272.6 mW at 10 °C at 1.3 μm. Under pulsed operation, where the device heating is greatly minimized, the InAs QD laser (2 × 2,000 μm(2)) delivered extremely high output power (both facets) of up to 1.22 W at 20 °C, at high external differential quantum efficiency of 96%. Far field pattern measurement of the 2-μm RWG InAs QD lasers showed single lateral mode operation. |
format | Online Article Text |
id | pubmed-3246353 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2007 |
publisher | Springer |
record_format | MEDLINE/PubMed |
spelling | pubmed-32463532011-12-29 Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers Cao, Q Yoon, SF Liu, CY Ngo, CY Nanoscale Res Lett Nano Express Ten-layer InAs/In(0.15)Ga(0.85)As quantum dot (QD) laser structures have been grown using molecular beam epitaxy (MBE) on GaAs (001) substrate. Using the pulsed anodic oxidation technique, narrow (2 μm) ridge waveguide (RWG) InAs QD lasers have been fabricated. Under continuous wave operation, the InAs QD laser (2 × 2,000 μm(2)) delivered total output power of up to 272.6 mW at 10 °C at 1.3 μm. Under pulsed operation, where the device heating is greatly minimized, the InAs QD laser (2 × 2,000 μm(2)) delivered extremely high output power (both facets) of up to 1.22 W at 20 °C, at high external differential quantum efficiency of 96%. Far field pattern measurement of the 2-μm RWG InAs QD lasers showed single lateral mode operation. Springer 2007-06-14 /pmc/articles/PMC3246353/ http://dx.doi.org/10.1007/s11671-007-9066-4 Text en Copyright ©2007 to the authors |
spellingShingle | Nano Express Cao, Q Yoon, SF Liu, CY Ngo, CY Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers |
title | Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers |
title_full | Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers |
title_fullStr | Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers |
title_full_unstemmed | Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers |
title_short | Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers |
title_sort | narrow ridge waveguide high power single mode 1.3-μm inas/ingaas ten-layer quantum dot lasers |
topic | Nano Express |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3246353/ http://dx.doi.org/10.1007/s11671-007-9066-4 |
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