Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers

Ten-layer InAs/In(0.15)Ga(0.85)As quantum dot (QD) laser structures have been grown using molecular beam epitaxy (MBE) on GaAs (001) substrate. Using the pulsed anodic oxidation technique, narrow (2 μm) ridge waveguide (RWG) InAs QD lasers have been fabricated. Under continuous wave operation, the I...

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Detalles Bibliográficos
Autores principales: Cao, Q, Yoon, SF, Liu, CY, Ngo, CY
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2007
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3246353/
http://dx.doi.org/10.1007/s11671-007-9066-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3246353/
http://dx.doi.org/10.1007/s11671-007-9066-4

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