The Influence of a Continuum Background on Carrier Relaxation in InAs/InGaAs Quantum Dot

We have investigated the ultra-fast carrier dynamics in Molecular Beam Epitaxy (MBE)-grown InAs/InGaAs/GaAs quantum dots (QDs) emitting at 1.3 μm by time resolved photoluminescence (TRPL) upconversion measurements with a time resolution of about 200 fs. Changing the detection energies in the spectra...

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Autores principales: Rainò, Gabriele, Visimberga, Giuseppe, Salhi, Abdelmajid, Todaro, Maria T, De Vittorio, Massimo, Passaseo, Adriana, Cingolani, Roberto, De Giorgi, Milena
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2007
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3246602/
http://dx.doi.org/10.1007/s11671-007-9092-2
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author Rainò, Gabriele
Visimberga, Giuseppe
Salhi, Abdelmajid
Todaro, Maria T
De Vittorio, Massimo
Passaseo, Adriana
Cingolani, Roberto
De Giorgi, Milena
author_facet Rainò, Gabriele
Visimberga, Giuseppe
Salhi, Abdelmajid
Todaro, Maria T
De Vittorio, Massimo
Passaseo, Adriana
Cingolani, Roberto
De Giorgi, Milena
author_sort Rainò, Gabriele
collection PubMed
description We have investigated the ultra-fast carrier dynamics in Molecular Beam Epitaxy (MBE)-grown InAs/InGaAs/GaAs quantum dots (QDs) emitting at 1.3 μm by time resolved photoluminescence (TRPL) upconversion measurements with a time resolution of about 200 fs. Changing the detection energies in the spectral region from the energy of the quantum dots excitonic transition up to the barrier layer absorption edge, we have found that, under high excitation intensity, the intrinsic electronic states are populated mainly by carriers directly captured from the barrier.
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spelling pubmed-32466022011-12-28 The Influence of a Continuum Background on Carrier Relaxation in InAs/InGaAs Quantum Dot Rainò, Gabriele Visimberga, Giuseppe Salhi, Abdelmajid Todaro, Maria T De Vittorio, Massimo Passaseo, Adriana Cingolani, Roberto De Giorgi, Milena Nanoscale Res Lett Nano Express We have investigated the ultra-fast carrier dynamics in Molecular Beam Epitaxy (MBE)-grown InAs/InGaAs/GaAs quantum dots (QDs) emitting at 1.3 μm by time resolved photoluminescence (TRPL) upconversion measurements with a time resolution of about 200 fs. Changing the detection energies in the spectral region from the energy of the quantum dots excitonic transition up to the barrier layer absorption edge, we have found that, under high excitation intensity, the intrinsic electronic states are populated mainly by carriers directly captured from the barrier. Springer 2007-09-13 /pmc/articles/PMC3246602/ http://dx.doi.org/10.1007/s11671-007-9092-2 Text en Copyright ©2007 to the authors
spellingShingle Nano Express
Rainò, Gabriele
Visimberga, Giuseppe
Salhi, Abdelmajid
Todaro, Maria T
De Vittorio, Massimo
Passaseo, Adriana
Cingolani, Roberto
De Giorgi, Milena
The Influence of a Continuum Background on Carrier Relaxation in InAs/InGaAs Quantum Dot
title The Influence of a Continuum Background on Carrier Relaxation in InAs/InGaAs Quantum Dot
title_full The Influence of a Continuum Background on Carrier Relaxation in InAs/InGaAs Quantum Dot
title_fullStr The Influence of a Continuum Background on Carrier Relaxation in InAs/InGaAs Quantum Dot
title_full_unstemmed The Influence of a Continuum Background on Carrier Relaxation in InAs/InGaAs Quantum Dot
title_short The Influence of a Continuum Background on Carrier Relaxation in InAs/InGaAs Quantum Dot
title_sort influence of a continuum background on carrier relaxation in inas/ingaas quantum dot
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3246602/
http://dx.doi.org/10.1007/s11671-007-9092-2
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