The Influence of a Continuum Background on Carrier Relaxation in InAs/InGaAs Quantum Dot

We have investigated the ultra-fast carrier dynamics in Molecular Beam Epitaxy (MBE)-grown InAs/InGaAs/GaAs quantum dots (QDs) emitting at 1.3 μm by time resolved photoluminescence (TRPL) upconversion measurements with a time resolution of about 200 fs. Changing the detection energies in the spectra...

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Detalles Bibliográficos
Autores principales: Rainò, Gabriele, Visimberga, Giuseppe, Salhi, Abdelmajid, Todaro, Maria T, De Vittorio, Massimo, Passaseo, Adriana, Cingolani, Roberto, De Giorgi, Milena
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2007
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3246602/
http://dx.doi.org/10.1007/s11671-007-9092-2

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