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Binding Energy of Hydrogen-Like Impurities in Quantum Well Wires of InSb/GaAs in a Magnetic Field

The binding energy of a hydrogen-like impurity in a thin size-quantized wire of the InSb/GaAs semiconductors with Kane’s dispersion law in a magnetic fieldBparallel to the wire axis has been calculated as a function of the radius of the wire and magnitude ofB, using a variational approach. It is sho...

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Detalles Bibliográficos
Autor principal: Poghosyan, B Zh.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2007
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3246605/
http://dx.doi.org/10.1007/s11671-007-9084-2
Descripción
Sumario:The binding energy of a hydrogen-like impurity in a thin size-quantized wire of the InSb/GaAs semiconductors with Kane’s dispersion law in a magnetic fieldBparallel to the wire axis has been calculated as a function of the radius of the wire and magnitude ofB, using a variational approach. It is shown that when wire radius is less than the Bohr radius of the impurity, the nonparabolicity of dispersion law of charge carriers leads to a considerable increase of the binding energy in the magnetic field, as well as to a more rapid growth of binding energy with growth ofB.