Influence of GaAs Substrate Orientation on InAs Quantum Dots: Surface Morphology, Critical Thickness, and Optical Properties

InAs/GaAs heterostructures have been simultaneously grown by molecular beam epitaxy on GaAs (100), GaAs (100) with a 2° misorientation angle towards [01−1], and GaAs (n11)B (n = 9, 7, 5) substrates. While the substrate misorientation angle increased from 0° to 15.8°, a clear evolution from quantum d...

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Detalles Bibliográficos
Autores principales: Liang, BL, Wang, Zh M, Sablon, KA, Mazur, Yu I, Salamo, GJ
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2007
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3246621/
http://dx.doi.org/10.1007/s11671-007-9103-3
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author Liang, BL
Wang, Zh M
Sablon, KA
Mazur, Yu I
Salamo, GJ
author_facet Liang, BL
Wang, Zh M
Sablon, KA
Mazur, Yu I
Salamo, GJ
author_sort Liang, BL
collection PubMed
description InAs/GaAs heterostructures have been simultaneously grown by molecular beam epitaxy on GaAs (100), GaAs (100) with a 2° misorientation angle towards [01−1], and GaAs (n11)B (n = 9, 7, 5) substrates. While the substrate misorientation angle increased from 0° to 15.8°, a clear evolution from quantum dots to quantum well was evident by the surface morphology, the photoluminescence, and the time-resolved photoluminescence, respectively. This evolution revealed an increased critical thickness and a delayed formation of InAs quantum dots as the surface orientation departed from GaAs (100), which was explained by the thermal-equilibrium model due to the less efficient of strain relaxation on misoriented substrate surfaces.
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spelling pubmed-32466212011-12-28 Influence of GaAs Substrate Orientation on InAs Quantum Dots: Surface Morphology, Critical Thickness, and Optical Properties Liang, BL Wang, Zh M Sablon, KA Mazur, Yu I Salamo, GJ Nanoscale Res Lett Nano Express InAs/GaAs heterostructures have been simultaneously grown by molecular beam epitaxy on GaAs (100), GaAs (100) with a 2° misorientation angle towards [01−1], and GaAs (n11)B (n = 9, 7, 5) substrates. While the substrate misorientation angle increased from 0° to 15.8°, a clear evolution from quantum dots to quantum well was evident by the surface morphology, the photoluminescence, and the time-resolved photoluminescence, respectively. This evolution revealed an increased critical thickness and a delayed formation of InAs quantum dots as the surface orientation departed from GaAs (100), which was explained by the thermal-equilibrium model due to the less efficient of strain relaxation on misoriented substrate surfaces. Springer 2007-11-06 /pmc/articles/PMC3246621/ http://dx.doi.org/10.1007/s11671-007-9103-3 Text en Copyright ©2007 to the authors
spellingShingle Nano Express
Liang, BL
Wang, Zh M
Sablon, KA
Mazur, Yu I
Salamo, GJ
Influence of GaAs Substrate Orientation on InAs Quantum Dots: Surface Morphology, Critical Thickness, and Optical Properties
title Influence of GaAs Substrate Orientation on InAs Quantum Dots: Surface Morphology, Critical Thickness, and Optical Properties
title_full Influence of GaAs Substrate Orientation on InAs Quantum Dots: Surface Morphology, Critical Thickness, and Optical Properties
title_fullStr Influence of GaAs Substrate Orientation on InAs Quantum Dots: Surface Morphology, Critical Thickness, and Optical Properties
title_full_unstemmed Influence of GaAs Substrate Orientation on InAs Quantum Dots: Surface Morphology, Critical Thickness, and Optical Properties
title_short Influence of GaAs Substrate Orientation on InAs Quantum Dots: Surface Morphology, Critical Thickness, and Optical Properties
title_sort influence of gaas substrate orientation on inas quantum dots: surface morphology, critical thickness, and optical properties
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3246621/
http://dx.doi.org/10.1007/s11671-007-9103-3
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