Self-organization of quantum-dot pairs by high-temperature droplet epitaxy

The spontaneously formation of epitaxial GaAs quantum-dot pairs was demonstrated on an AlGaAs surface using Ga droplets as a Ga nano-source. The dot pair formation was attributed to the anisotropy of surface diffusion during high-temperature droplet epitaxy.

Detalles Bibliográficos
Autores principales: Wang, Zhiming M, Holmes, Kyland, Mazur, Yuriy I, Ramsey, Kimberly A, Salamo, Gregory J
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2006
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3246624/
http://dx.doi.org/10.1007/s11671-006-9002-z
Descripción
Sumario:The spontaneously formation of epitaxial GaAs quantum-dot pairs was demonstrated on an AlGaAs surface using Ga droplets as a Ga nano-source. The dot pair formation was attributed to the anisotropy of surface diffusion during high-temperature droplet epitaxy.

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