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Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices

The luminescence properties of highly strained, Sb-doped Ge/Si multi-layer heterostructures with incorporated Ge quantum dots (QDs) are studied. Calculations of the electronic band structure and luminescence measurements prove the existence of an electron miniband within the columns of the QDs. Mini...

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Autores principales: Talalaev, VG, Cirlin, GE, Tonkikh, AA, Zakharov, ND, Werner, P, Gösele, U, Tomm, JW, Elsaesser, T
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2006
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3246673/
http://dx.doi.org/10.1007/s11671-006-9004-x
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author Talalaev, VG
Cirlin, GE
Tonkikh, AA
Zakharov, ND
Werner, P
Gösele, U
Tomm, JW
Elsaesser, T
author_facet Talalaev, VG
Cirlin, GE
Tonkikh, AA
Zakharov, ND
Werner, P
Gösele, U
Tomm, JW
Elsaesser, T
author_sort Talalaev, VG
collection PubMed
description The luminescence properties of highly strained, Sb-doped Ge/Si multi-layer heterostructures with incorporated Ge quantum dots (QDs) are studied. Calculations of the electronic band structure and luminescence measurements prove the existence of an electron miniband within the columns of the QDs. Miniband formation results in a conversion of the indirect to a quasi-direct excitons takes place. The optical transitions between electron states within the miniband and hole states within QDs are responsible for an intense luminescence in the 1.4–1.8 µm range, which is maintained up to room temperature. At 300 K, a light emitting diode based on such Ge/Si QD superlattices demonstrates an external quantum efficiency of 0.04% at a wavelength of 1.55 µm.
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spelling pubmed-32466732011-12-28 Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices Talalaev, VG Cirlin, GE Tonkikh, AA Zakharov, ND Werner, P Gösele, U Tomm, JW Elsaesser, T Nanoscale Res Lett Nano Express The luminescence properties of highly strained, Sb-doped Ge/Si multi-layer heterostructures with incorporated Ge quantum dots (QDs) are studied. Calculations of the electronic band structure and luminescence measurements prove the existence of an electron miniband within the columns of the QDs. Miniband formation results in a conversion of the indirect to a quasi-direct excitons takes place. The optical transitions between electron states within the miniband and hole states within QDs are responsible for an intense luminescence in the 1.4–1.8 µm range, which is maintained up to room temperature. At 300 K, a light emitting diode based on such Ge/Si QD superlattices demonstrates an external quantum efficiency of 0.04% at a wavelength of 1.55 µm. Springer 2006-08-01 /pmc/articles/PMC3246673/ http://dx.doi.org/10.1007/s11671-006-9004-x Text en Copyright ©2006 to the authors
spellingShingle Nano Express
Talalaev, VG
Cirlin, GE
Tonkikh, AA
Zakharov, ND
Werner, P
Gösele, U
Tomm, JW
Elsaesser, T
Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices
title Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices
title_full Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices
title_fullStr Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices
title_full_unstemmed Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices
title_short Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices
title_sort miniband-related 1.4–1.8 μm luminescence of ge/si quantum dot superlattices
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3246673/
http://dx.doi.org/10.1007/s11671-006-9004-x
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