Temperature dependent optical properties of single, hierarchically self-assembled GaAs/AlGaAs quantum dots

We report on the experimental observation of bright photoluminescence emission at room temperature from single unstrained GaAs quantum dots (QDs). The linewidth of a single-QD ground-state emission (≈ 8.5 meV) is comparable to the ensemble inhomogeneous broadening (≈ 12.4 meV). At low temperature (T...

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Detalles Bibliográficos
Autores principales: Benyoucef, M, Rastelli, A, Schmidt, OG, Ulrich, SM, Michler, P
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2006
Materias:
Original Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3246675/
http://dx.doi.org/10.1007/s11671-006-9019-3
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author Benyoucef, M
Rastelli, A
Schmidt, OG
Ulrich, SM
Michler, P
author_facet Benyoucef, M
Rastelli, A
Schmidt, OG
Ulrich, SM
Michler, P
author_sort Benyoucef, M
collection PubMed
description We report on the experimental observation of bright photoluminescence emission at room temperature from single unstrained GaAs quantum dots (QDs). The linewidth of a single-QD ground-state emission (≈ 8.5 meV) is comparable to the ensemble inhomogeneous broadening (≈ 12.4 meV). At low temperature (T ≤ 40 K) photon correlation measurements under continuous wave excitation show nearly perfect single-photon emission from a single GaAs QD and reveal the single photon nature of the emitted light up to 77 K. The QD emission energies, homogeneous linewidths and the thermally activated behavior as a function of temperature are discussed.
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spelling pubmed-32466752011-12-28 Temperature dependent optical properties of single, hierarchically self-assembled GaAs/AlGaAs quantum dots Benyoucef, M Rastelli, A Schmidt, OG Ulrich, SM Michler, P Nanoscale Res Lett Original Paper We report on the experimental observation of bright photoluminescence emission at room temperature from single unstrained GaAs quantum dots (QDs). The linewidth of a single-QD ground-state emission (≈ 8.5 meV) is comparable to the ensemble inhomogeneous broadening (≈ 12.4 meV). At low temperature (T ≤ 40 K) photon correlation measurements under continuous wave excitation show nearly perfect single-photon emission from a single GaAs QD and reveal the single photon nature of the emitted light up to 77 K. The QD emission energies, homogeneous linewidths and the thermally activated behavior as a function of temperature are discussed. Springer 2006-09-27 /pmc/articles/PMC3246675/ http://dx.doi.org/10.1007/s11671-006-9019-3 Text en Copyright ©2006 to the authors
spellingShingle Original Paper
Benyoucef, M
Rastelli, A
Schmidt, OG
Ulrich, SM
Michler, P
Temperature dependent optical properties of single, hierarchically self-assembled GaAs/AlGaAs quantum dots
title Temperature dependent optical properties of single, hierarchically self-assembled GaAs/AlGaAs quantum dots
title_full Temperature dependent optical properties of single, hierarchically self-assembled GaAs/AlGaAs quantum dots
title_fullStr Temperature dependent optical properties of single, hierarchically self-assembled GaAs/AlGaAs quantum dots
title_full_unstemmed Temperature dependent optical properties of single, hierarchically self-assembled GaAs/AlGaAs quantum dots
title_short Temperature dependent optical properties of single, hierarchically self-assembled GaAs/AlGaAs quantum dots
title_sort temperature dependent optical properties of single, hierarchically self-assembled gaas/algaas quantum dots
topic Original Paper
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3246675/
http://dx.doi.org/10.1007/s11671-006-9019-3
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