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Temperature dependent optical properties of single, hierarchically self-assembled GaAs/AlGaAs quantum dots

We report on the experimental observation of bright photoluminescence emission at room temperature from single unstrained GaAs quantum dots (QDs). The linewidth of a single-QD ground-state emission (≈ 8.5 meV) is comparable to the ensemble inhomogeneous broadening (≈ 12.4 meV). At low temperature (T...

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Detalles Bibliográficos
Autores principales:	Benyoucef, M, Rastelli, A, Schmidt, OG, Ulrich, SM, Michler, P
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer 2006
Materias:	Original Paper
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3246675/ http://dx.doi.org/10.1007/s11671-006-9019-3

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