Transport and infrared photoresponse properties of InN nanorods/Si heterojunction

The present work explores the electrical transport and infrared (IR) photoresponse properties of InN nanorods (NRs)/n-Si heterojunction grown by plasma-assisted molecular beam epitaxy. Single-crystalline wurtzite structure of InN NRs is verified by the X-ray diffraction and transmission electron mic...

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Autores principales: Kumar, Mahesh, Bhat, Thirumaleshwara N, Rajpalke, Mohana K, Roul, Basanta, Kalghatgi, Ajit T, Krupanidhi, S B
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3256238/
https://www.ncbi.nlm.nih.gov/pubmed/22122843
http://dx.doi.org/10.1186/1556-276X-6-609
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author Kumar, Mahesh
Bhat, Thirumaleshwara N
Rajpalke, Mohana K
Roul, Basanta
Kalghatgi, Ajit T
Krupanidhi, S B
author_facet Kumar, Mahesh
Bhat, Thirumaleshwara N
Rajpalke, Mohana K
Roul, Basanta
Kalghatgi, Ajit T
Krupanidhi, S B
author_sort Kumar, Mahesh
collection PubMed
description The present work explores the electrical transport and infrared (IR) photoresponse properties of InN nanorods (NRs)/n-Si heterojunction grown by plasma-assisted molecular beam epitaxy. Single-crystalline wurtzite structure of InN NRs is verified by the X-ray diffraction and transmission electron microscopy. Raman measurements show that these wurtzite InN NRs have sharp peaks E(2)(high) at 490.2 cm(-1 )and A(1)(LO) at 591 cm(-1). The current transport mechanism of the NRs is limited by three types of mechanisms depending on applied bias voltages. The electrical transport properties of the device were studied in the range of 80 to 450 K. The faster rise and decay time indicate that the InN NRs/n-Si heterojunction is highly sensitive to IR light.
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spelling pubmed-32562382012-01-18 Transport and infrared photoresponse properties of InN nanorods/Si heterojunction Kumar, Mahesh Bhat, Thirumaleshwara N Rajpalke, Mohana K Roul, Basanta Kalghatgi, Ajit T Krupanidhi, S B Nanoscale Res Lett Nano Express The present work explores the electrical transport and infrared (IR) photoresponse properties of InN nanorods (NRs)/n-Si heterojunction grown by plasma-assisted molecular beam epitaxy. Single-crystalline wurtzite structure of InN NRs is verified by the X-ray diffraction and transmission electron microscopy. Raman measurements show that these wurtzite InN NRs have sharp peaks E(2)(high) at 490.2 cm(-1 )and A(1)(LO) at 591 cm(-1). The current transport mechanism of the NRs is limited by three types of mechanisms depending on applied bias voltages. The electrical transport properties of the device were studied in the range of 80 to 450 K. The faster rise and decay time indicate that the InN NRs/n-Si heterojunction is highly sensitive to IR light. Springer 2011-11-28 /pmc/articles/PMC3256238/ /pubmed/22122843 http://dx.doi.org/10.1186/1556-276X-6-609 Text en Copyright ©2011 Kumar et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Kumar, Mahesh
Bhat, Thirumaleshwara N
Rajpalke, Mohana K
Roul, Basanta
Kalghatgi, Ajit T
Krupanidhi, S B
Transport and infrared photoresponse properties of InN nanorods/Si heterojunction
title Transport and infrared photoresponse properties of InN nanorods/Si heterojunction
title_full Transport and infrared photoresponse properties of InN nanorods/Si heterojunction
title_fullStr Transport and infrared photoresponse properties of InN nanorods/Si heterojunction
title_full_unstemmed Transport and infrared photoresponse properties of InN nanorods/Si heterojunction
title_short Transport and infrared photoresponse properties of InN nanorods/Si heterojunction
title_sort transport and infrared photoresponse properties of inn nanorods/si heterojunction
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3256238/
https://www.ncbi.nlm.nih.gov/pubmed/22122843
http://dx.doi.org/10.1186/1556-276X-6-609
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