Fabrication of Wireless Micro Pressure Sensor Using the CMOS Process

In this study, we fabricated a wireless micro FET (field effect transistor) pressure sensor based on the commercial CMOS (complementary metal oxide semiconductor) process and a post-process. The wireless micro pressure sensor is composed of a FET pressure sensor, an oscillator, an amplifier and an a...

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Detalles Bibliográficos
Autores principales: Dai, Ching-Liang, Lu, Po-Wei, Wu, Chyan-Chyi, Chang, Chienliu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Molecular Diversity Preservation International (MDPI) 2009
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3260611/
https://www.ncbi.nlm.nih.gov/pubmed/22291534
http://dx.doi.org/10.3390/s91108748

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3260611/
https://www.ncbi.nlm.nih.gov/pubmed/22291534
http://dx.doi.org/10.3390/s91108748

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