Stability of SiN(X)/SiN(X )double stack antireflection coating for single crystalline silicon solar cells

Double stack antireflection coatings have significant advantages over single-layer antireflection coatings due to their broad-range coverage of the solar spectrum. A solar cell with 60-nm/20-nm SiN(X):H double stack coatings has 17.8% efficiency, while that with a 80-nm SiN(X):H single coating has 17.2% efficiency. The improvement of the efficiency is due to the effect of better passivation and better antireflection of the double stack antireflection coating. It is important that SiN(X):H films have strong resistance against stress factors since they are used as antireflective coating for solar cells. However, the tolerance of SiN(X):H films to external stresses has never been studied. In this paper, the stability of SiN(X):H films prepared by a plasma-enhanced chemical vapor deposition system is studied. The stability tests are conducted using various forms of stress, such as prolonged thermal cycle, humidity, and UV exposure. The heat and damp test was conducted for 100 h, maintaining humidity at 85% and applying thermal cycles of rapidly changing temperatures from -20°C to 85°C over 5 h. UV exposure was conducted for 50 h using a 180-W UV lamp. This confirmed that the double stack antireflection coating is stable against external stress.