Anisotropic in-plane spin splitting in an asymmetric (001) GaAs/AlGaAs quantum well

The in-plane spin splitting of conduction-band electron has been investigated in an asymmetric (001) GaAs/Al(x)Ga(1-x)As quantum well by time-resolved Kerr rotation technique under a transverse magnetic field. The distinctive anisotropy of the spin splitting was observed while the temperature is bel...

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Detalles Bibliográficos
Autores principales: Ye, Huiqi, Hu, Changcheng, Wang, Gang, Zhao, Hongming, Tian, Haitao, Zhang, Xiuwen, Wang, Wenxin, Liu, Baoli
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3271362/
https://www.ncbi.nlm.nih.gov/pubmed/21888636
http://dx.doi.org/10.1186/1556-276X-6-520
Descripción
Sumario:The in-plane spin splitting of conduction-band electron has been investigated in an asymmetric (001) GaAs/Al(x)Ga(1-x)As quantum well by time-resolved Kerr rotation technique under a transverse magnetic field. The distinctive anisotropy of the spin splitting was observed while the temperature is below approximately 200 K. This anisotropy emerges from the combined effect of Dresselhaus spin-orbit coupling plus asymmetric potential gradients. We also exploit the temperature dependence of spin-splitting energy. Both the anisotropy of spin splitting and the in-plane effective g-factor decrease with increasing temperature. PACS: 78.47.jm, 71.70.Ej, 75.75.+a, 72.25.Fe,

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