Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silic...

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Detalles Bibliográficos
Autores principales: Vashpanov, Yuriy, Jung, Jae Il, Kwack, Kae Dal
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Molecular Diversity Preservation International (MDPI) 2011
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3274009/
https://www.ncbi.nlm.nih.gov/pubmed/22319353
http://dx.doi.org/10.3390/s110201321
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author Vashpanov, Yuriy
Jung, Jae Il
Kwack, Kae Dal
author_facet Vashpanov, Yuriy
Jung, Jae Il
Kwack, Kae Dal
author_sort Vashpanov, Yuriy
collection PubMed
description A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.
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spelling pubmed-32740092012-02-08 Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption Vashpanov, Yuriy Jung, Jae Il Kwack, Kae Dal Sensors (Basel) Article A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light. Molecular Diversity Preservation International (MDPI) 2011-01-25 /pmc/articles/PMC3274009/ /pubmed/22319353 http://dx.doi.org/10.3390/s110201321 Text en © 2011 by the authors; licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/3.0/).
spellingShingle Article
Vashpanov, Yuriy
Jung, Jae Il
Kwack, Kae Dal
Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption
title Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption
title_full Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption
title_fullStr Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption
title_full_unstemmed Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption
title_short Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption
title_sort photo-emf sensitivity of porous silicon thin layer–crystalline silicon heterojunction to ammonia adsorption
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3274009/
https://www.ncbi.nlm.nih.gov/pubmed/22319353
http://dx.doi.org/10.3390/s110201321
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AT kwackkaedal photoemfsensitivityofporoussiliconthinlayercrystallinesiliconheterojunctiontoammoniaadsorption

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