Hall Sensors for Extreme Temperatures

We report on the preparation of the first complete extreme temperature Hall sensor. This means that the extreme-temperature magnetic sensitive semiconductor structure is built-in an extreme-temperature package especially designed for that purpose. The working temperature range of the sensor extends...

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Detalles Bibliográficos
Autores principales: Jankowski, Jakub, El-Ahmar, Semir, Oszwaldowski, Maciej
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Molecular Diversity Preservation International (MDPI) 2011
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3274123/
https://www.ncbi.nlm.nih.gov/pubmed/22346608
http://dx.doi.org/10.3390/s110100876
_version_ 1782223016068907008
author Jankowski, Jakub
El-Ahmar, Semir
Oszwaldowski, Maciej
author_facet Jankowski, Jakub
El-Ahmar, Semir
Oszwaldowski, Maciej
author_sort Jankowski, Jakub
collection PubMed
description We report on the preparation of the first complete extreme temperature Hall sensor. This means that the extreme-temperature magnetic sensitive semiconductor structure is built-in an extreme-temperature package especially designed for that purpose. The working temperature range of the sensor extends from −270 °C to +300 °C. The extreme-temperature Hall-sensor active element is a heavily n-doped InSb layer epitaxially grown on GaAs. The magnetic sensitivity of the sensor is ca. 100 mV/T and its temperature coefficient is less than 0.04 %/K. This sensor may find applications in the car, aircraft, spacecraft, military and oil and gas industries.
format Online
Article
Text
id pubmed-3274123
institution National Center for Biotechnology Information
language English
publishDate 2011
publisher Molecular Diversity Preservation International (MDPI)
record_format MEDLINE/PubMed
spelling pubmed-32741232012-02-15 Hall Sensors for Extreme Temperatures Jankowski, Jakub El-Ahmar, Semir Oszwaldowski, Maciej Sensors (Basel) Article We report on the preparation of the first complete extreme temperature Hall sensor. This means that the extreme-temperature magnetic sensitive semiconductor structure is built-in an extreme-temperature package especially designed for that purpose. The working temperature range of the sensor extends from −270 °C to +300 °C. The extreme-temperature Hall-sensor active element is a heavily n-doped InSb layer epitaxially grown on GaAs. The magnetic sensitivity of the sensor is ca. 100 mV/T and its temperature coefficient is less than 0.04 %/K. This sensor may find applications in the car, aircraft, spacecraft, military and oil and gas industries. Molecular Diversity Preservation International (MDPI) 2011-01-14 /pmc/articles/PMC3274123/ /pubmed/22346608 http://dx.doi.org/10.3390/s110100876 Text en © 2011 by the authors; licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/3.0/).
spellingShingle Article
Jankowski, Jakub
El-Ahmar, Semir
Oszwaldowski, Maciej
Hall Sensors for Extreme Temperatures
title Hall Sensors for Extreme Temperatures
title_full Hall Sensors for Extreme Temperatures
title_fullStr Hall Sensors for Extreme Temperatures
title_full_unstemmed Hall Sensors for Extreme Temperatures
title_short Hall Sensors for Extreme Temperatures
title_sort hall sensors for extreme temperatures
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3274123/
https://www.ncbi.nlm.nih.gov/pubmed/22346608
http://dx.doi.org/10.3390/s110100876
work_keys_str_mv AT jankowskijakub hallsensorsforextremetemperatures
AT elahmarsemir hallsensorsforextremetemperatures
AT oszwaldowskimaciej hallsensorsforextremetemperatures

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