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Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method

In this study, Pb(Zr(0.52)Ti(0.48))O(3)/BiFeO(3 )[PZT/BFO] multilayer thin films were fabricated using the spin-coating method on a Pt(200 nm)/Ti(10 nm)/SiO(2)(100 nm)/p-Si(100) substrate alternately using BFO and PZT metal alkoxide solutions. The coating-and-heating procedure was repeated several t...

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Detalles Bibliográficos
Autores principales: Jo, Seo-Hyeon, Lee, Sung-Gap, Lee, Young-Hie
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3275469/
https://www.ncbi.nlm.nih.gov/pubmed/22221519
http://dx.doi.org/10.1186/1556-276X-7-54
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author Jo, Seo-Hyeon
Lee, Sung-Gap
Lee, Young-Hie
author_facet Jo, Seo-Hyeon
Lee, Sung-Gap
Lee, Young-Hie
author_sort Jo, Seo-Hyeon
collection PubMed
description In this study, Pb(Zr(0.52)Ti(0.48))O(3)/BiFeO(3 )[PZT/BFO] multilayer thin films were fabricated using the spin-coating method on a Pt(200 nm)/Ti(10 nm)/SiO(2)(100 nm)/p-Si(100) substrate alternately using BFO and PZT metal alkoxide solutions. The coating-and-heating procedure was repeated several times to form the multilayer thin films. All PZT/BFO multilayer thin films show a void-free, uniform grain structure without the presence of rosette structures. The relative dielectric constant and dielectric loss of the six-coated PZT/BFO [PZT/BFO-6] thin film were approximately 405 and 0.03%, respectively. As the number of coatings increased, the remanent polarization and coercive field increased. The values for the BFO-6 multilayer thin film were 41.3 C/cm(2 )and 15.1 MV/cm, respectively. The leakage current density of the BFO-6 multilayer thin film at 5 V was 2.52 × 10(-7 )A/cm(2).
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spelling pubmed-32754692012-02-09 Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method Jo, Seo-Hyeon Lee, Sung-Gap Lee, Young-Hie Nanoscale Res Lett Nano Express In this study, Pb(Zr(0.52)Ti(0.48))O(3)/BiFeO(3 )[PZT/BFO] multilayer thin films were fabricated using the spin-coating method on a Pt(200 nm)/Ti(10 nm)/SiO(2)(100 nm)/p-Si(100) substrate alternately using BFO and PZT metal alkoxide solutions. The coating-and-heating procedure was repeated several times to form the multilayer thin films. All PZT/BFO multilayer thin films show a void-free, uniform grain structure without the presence of rosette structures. The relative dielectric constant and dielectric loss of the six-coated PZT/BFO [PZT/BFO-6] thin film were approximately 405 and 0.03%, respectively. As the number of coatings increased, the remanent polarization and coercive field increased. The values for the BFO-6 multilayer thin film were 41.3 C/cm(2 )and 15.1 MV/cm, respectively. The leakage current density of the BFO-6 multilayer thin film at 5 V was 2.52 × 10(-7 )A/cm(2). Springer 2012-01-05 /pmc/articles/PMC3275469/ /pubmed/22221519 http://dx.doi.org/10.1186/1556-276X-7-54 Text en Copyright ©2012 Jo et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Jo, Seo-Hyeon
Lee, Sung-Gap
Lee, Young-Hie
Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method
title Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method
title_full Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method
title_fullStr Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method
title_full_unstemmed Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method
title_short Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method
title_sort ferroelectric properties of pzt/bfo multilayer thin films prepared using the sol-gel method
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3275469/
https://www.ncbi.nlm.nih.gov/pubmed/22221519
http://dx.doi.org/10.1186/1556-276X-7-54
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