The structural and optical properties of GaSb/InGaAs type-II quantum dots grown on InP (100) substrate

We have investigated the structural and optical properties of type-II GaSb/InGaAs quantum dots [QDs] grown on InP (100) substrate by molecular beam epitaxy. Rectangular-shaped GaSb QDs were well developed and no nanodash-like structures which could be easily found in the InAs/InP QD system were form...

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Detalles Bibliográficos
Autores principales: Shuhui, Zhang, Lu, Wang, Zhenwu, Shi, Yanxiang, Cui, Haitao, Tian, Huaiju, Gao, Haiqiang, Jia, Wenxin, Wang, Hong, Chen, Liancheng, Zhao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Original Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3278347/
https://www.ncbi.nlm.nih.gov/pubmed/22277096
http://dx.doi.org/10.1186/1556-276X-7-87
Descripción
Sumario:We have investigated the structural and optical properties of type-II GaSb/InGaAs quantum dots [QDs] grown on InP (100) substrate by molecular beam epitaxy. Rectangular-shaped GaSb QDs were well developed and no nanodash-like structures which could be easily found in the InAs/InP QD system were formed. Low-temperature photoluminescence spectra show there are two peaks centered at 0.75eV and 0.76ev. The low-energy peak blueshifted with increasing excitation power is identified as the indirect transition from the InGaAs conduction band to the GaSb hole level (type-II), and the high-energy peak is identified as the direct transition (type-I) of GaSb QDs. This material system shows a promising application on quantum-dot infrared detectors and quantum-dot field-effect transistor.

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