1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors

We present a single-transistor pixel for CMOS image sensors (CIS). It is a floating-body MOSFET structure, which is used as photo-sensing device and source-follower transistor, and can be controlled to store and evacuate charges. Our investigation into this 1T pixel structure includes modeling to ob...

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Detalles Bibliográficos
Autores principales: Lu, Guo-Neng, Tournier, Arnaud, Roy, François, Deschamps, Benoît
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Molecular Diversity Preservation International (MDPI) 2009
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3280738/
https://www.ncbi.nlm.nih.gov/pubmed/22389592
http://dx.doi.org/10.3390/s90100131
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author Lu, Guo-Neng
Tournier, Arnaud
Roy, François
Deschamps, Benoît
author_facet Lu, Guo-Neng
Tournier, Arnaud
Roy, François
Deschamps, Benoît
author_sort Lu, Guo-Neng
collection PubMed
description We present a single-transistor pixel for CMOS image sensors (CIS). It is a floating-body MOSFET structure, which is used as photo-sensing device and source-follower transistor, and can be controlled to store and evacuate charges. Our investigation into this 1T pixel structure includes modeling to obtain analytical description of conversion gain. Model validation has been done by comparing theoretical predictions and experimental results. On the other hand, the 1T pixel structure has been implemented in different configurations, including rectangular-gate and ring-gate designs, and variations of oxidation parameters for the fabrication process. The pixel characteristics are presented and discussed.
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spelling pubmed-32807382012-03-02 1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors Lu, Guo-Neng Tournier, Arnaud Roy, François Deschamps, Benoît Sensors (Basel) Article We present a single-transistor pixel for CMOS image sensors (CIS). It is a floating-body MOSFET structure, which is used as photo-sensing device and source-follower transistor, and can be controlled to store and evacuate charges. Our investigation into this 1T pixel structure includes modeling to obtain analytical description of conversion gain. Model validation has been done by comparing theoretical predictions and experimental results. On the other hand, the 1T pixel structure has been implemented in different configurations, including rectangular-gate and ring-gate designs, and variations of oxidation parameters for the fabrication process. The pixel characteristics are presented and discussed. Molecular Diversity Preservation International (MDPI) 2009-01-07 /pmc/articles/PMC3280738/ /pubmed/22389592 http://dx.doi.org/10.3390/s90100131 Text en © 2009 by the authors; licensee Molecular Diversity Preservation International, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/3.0/).
spellingShingle Article
Lu, Guo-Neng
Tournier, Arnaud
Roy, François
Deschamps, Benoît
1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors
title 1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors
title_full 1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors
title_fullStr 1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors
title_full_unstemmed 1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors
title_short 1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors
title_sort 1t pixel using floating-body mosfet for cmos image sensors
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3280738/
https://www.ncbi.nlm.nih.gov/pubmed/22389592
http://dx.doi.org/10.3390/s90100131
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AT royfrancois 1tpixelusingfloatingbodymosfetforcmosimagesensors
AT deschampsbenoit 1tpixelusingfloatingbodymosfetforcmosimagesensors

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